bas19-v, bas20-v, bas21-v document number 85540 rev. 1.7, 10-nov-10 vishay semiconductors www.vishay.com 1 12 3 16923 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diodes, high voltage features ? silicon epitaxial planar diode ? fast switching diode in case sot-23, especially suited fo r automatic insertion. ? these diodes are also available in other case styles including: the sod-123 case with the type designations bav19w-v to bav21w-v, the mini-melf case with the type designation bav101 to bav103, the do-35 case with the type designations bav19-v to bav21-v and the sod-323 case with type designation bav19ws-v to bav21ws-v. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/3k per 7" reel (8 mm tape), 15k/box parts table part type differentiation ordering code marking remarks bas19-v v rrm = 120 v bas19-v-gs18 or bas19-v-gs08 a8 tape and reel bas20-v v rrm = 200 v bas20-v-gs18 or BAS20-V-GS08 a81 tape and reel bas21-v v rrm = 250 v bas21-v-gs18 or bas21-v-gs08 a82 tape and reel
www.vishay.com 2 document number 85540 rev. 1.7, 10-nov-10 bas19-v, bas20-v, bas21-v vishay semiconductors for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com absolute maximum ratings t amb = 25 c, unless otherwise specified 1) measured under pulse condi tions; pulse time = t p 0.3 ms 2) device on fiberglass subs trate, see layout on next page thermal characteristics t amb = 25 c, unless otherwise specified 1) device on fiberglass subs trate, see layout on next page electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol value unit continuous reverse voltage bas19-v v r 100 v bas20-v v r 150 v bas21-v v r 200 v repetitive peak reverse voltage bas19-v v rrm 120 v bas20-v v rrm 200 v bas21-v v rrm 250 v non-repetitive peak forward current t = 1 s i fsm 2.5 a non-repetitive peak forward surge current t = 1 s i fsm 0.5 a maximum average forward rectified current (av. over any 20 ms period) i f(av) 200 1) ma dc forward current i f 200 2) ma repetitive peak forward current i frm 625 ma power dissipation p tot 250 2) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 430 1) c junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit forward voltage i f = 100 ma v f 1.0 v i f = 200 ma v f 1.25 v leakage current v r = v rmax. i r 100 na v r = v rmax. , t j = 150 c i r 100 a dynamic forward resistance i f = 10 ma r f 5 diode capacitance v r = 0, f = 1 mhz c tot 5pf reverse recovery time i f = i r = 30 ma, r l = 100 , i rr = 3 ma t rr 50 ns
bas19-v, bas20-v, bas21-v document number 85540 rev. 1.7, 10-nov-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com test circuit and waveforms layout for r thja test thickness: fiberglass 1.5 mm (0.059 in.) copper leads 0.3 mm (0.012 in.) test circuit inp u t signal - total p u lse d u r ation tp(tot )=2 s - d u ty f actor = 0.0025 -r ise time of re v erse p u lse t r = 0.6ns -r e v erse p u lse d u r ation t p = 100ns oscilloscope - r ise time t r = 0.35ns - cic u it capitance* c < 1pf * c= oscilloscope inp u t capactitance + par asitic capacitance w a v e fo rm s; i r =3ma input si g nal output si g nal 1 8 09 8 8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0. 8 ) 2 (0. 8 ) 1.5 (0.06) 5.1 (0.2)
www.vishay.com 4 document number 85540 rev. 1.7, 10-nov-10 bas19-v, bas20-v, bas21-v vishay semiconductors for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sot-23 foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
sot-23 vishay semiconductors sot-23 document number: 84004 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.3, 01-jul-10 diodes americas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 28 package dimensions in millimeters (inches) foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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